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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3507 DESCRIPTION With TO-3PFa package High-speed switching High collector-base voltage VCBO Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS For high-speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open base OND IC CONDITIONS TOR UC VALUE 1000 800 7 5 10 3 UNIT V V V A A A Open emitter Emitter-base voltage Open collector Collector current Collector current-peak Base current TC=25ae 80 W 3 150 -55~150 ae ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.5A ;L=50mH IC=3A ;IB=0.6A IC=3A ;IB=0.6A VCB=1000V; IE=0 VEB=7V; IC=0 IC=3A ; VCE=5V IC=0.5A ; VCE=5V;f=1MHz 6 6 MIN 800 2SC3507 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V 1.5 1.5 50 50 |I |I V V A A MHz Switching times ton ts tf Turn-on time Storage time Fall time CHA IN E SEM NG IC=3A; VCC=250V IB1=0.6A ,IB2=-1.2A OND IC TOR UC 1.0 |I 2.5 0.5 s |I |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3507 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3507 CHA IN E SEM NG OND IC TOR UC 4 |
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